Design of a multilayer RADANT –type antenna based on p-i-n diodes for the X-band

Authors

  • Alejandro Iturri Hinojosa ESIME Zacatenco del Instituto Politécnico Nacional
  • Alexander E. Martynyuk Facultad de Ingeniería de la Universidad Nacional Autónoma de México
  • José Luis López Bonilla ESIME Zacatenco del Instituto Politécnico Nacional

DOI:

https://doi.org/10.21640/ns.v6i11.67

Keywords:

Multilayer RADANT antenna, beam scanning, PIN diodes

Abstract

A design of a multilayer RADANT -type antenna based on PIN diodes for the X band is presented. The geometry of cells that conforms the grids and the scanning responses in E and H planes of a 3-bit multilayered antenna are obtained. A designed pair of grids for a multilayer array antenna achieves a phase shift difference of 3.5° in a bandwidth of 400MHz, with reflection coefficient less than 0.1 and a better insertion loss of -0.1dB. The E-plane scanning results shows emitting waves with directions up to 20° with conversion coefficient greater than 0.6 with a bandwidth of 1GHz. The H-plane scanning result have low conversion coefficient and low scanning angles due to the strong mutual interaction between elements.

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References

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Published

2014-10-08

How to Cite

Iturri Hinojosa, A., Martynyuk, A. E., & López Bonilla, J. L. (2014). Design of a multilayer RADANT –type antenna based on p-i-n diodes for the X-band. Nova Scientia, 6(11), 81–92. https://doi.org/10.21640/ns.v6i11.67

Issue

Section

Natural Sciences and Engineering

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